IRF7831PBF Datasheet. Specs and Replacement

Type Designator: IRF7831PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: SO-8

IRF7831PBF substitution

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IRF7831PBF datasheet

 ..1. Size:264K  international rectifier
 irf7831pbf.pdf pdf_icon

IRF7831PBF

PD - 95134B IRF7831PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 3.6m @VGS = 10V 30V 40nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Cu... See More ⇒

 7.1. Size:264K  international rectifier
 irf7831.pdf pdf_icon

IRF7831PBF

PD - 94636B IRF7831 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 3.6m @VGS = 10V 30V 40nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Curre... See More ⇒

 7.2. Size:810K  cn vbsemi
 irf7831tr.pdf pdf_icon

IRF7831PBF

IRF7831TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

 8.1. Size:262K  international rectifier
 irf7832pbf.pdf pdf_icon

IRF7831PBF

PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Chara... See More ⇒

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Detailed specifications: IRF7815PBF, IRF7820PBF, IRF7821GPBF, IRF7821PBF, IRF7821PBF-1, IRF7822PBF, IRF7822, IRF7828PBF, K2611, IRF7832PBF, IRF7832PBF-1, IRF7832Z, IRF7834PBF, IRF7842PBF, IRF7853PBF, IRF7854PBF, IRF7855PBF

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