IRL631 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRL631
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220

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IRL631 Datasheet (PDF)

..1. Size:41K 1
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9.1. Size:272K 1
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PD - 97622IRL6372PbFHEXFET Power MOSFETVDS30 VVGS12 V RDS(on) max 17.9 m(@VGS = 4.5V)Qg (typical) 11 nC SO-8ID8.1 A(@TA = 25C)Applications Battery operated DC motor inverter MOSFET System/Load Switch Charge and Discharge Switches for Battery ApplicationFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standard SO-8 Package Mul

9.2. Size:168K international rectifier
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PD - 9.1254IRL630SHEXFET Power MOSFETSurface MountAvailable in Tape & ReelVDSS = 200VDynamic dv/dt RatingRepetitive Avalanche RatedRDS(on) = 0.40Logic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5V150C Operating TemperatureID = 9.0ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switc

9.3. Size:1360K international rectifier
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PD- 95756IRL630PbF Lead-Free8/24/04Document Number: 91303 www.vishay.com1IRL630PbFDocument Number: 91303 www.vishay.com2IRL630PbFDocument Number: 91303 www.vishay.com3IRL630PbFDocument Number: 91303 www.vishay.com4IRL630PbFDocument Number: 91303 www.vishay.com5IRL630PbFDocument Number: 91303 www.vishay.com6IRL630PbFDocument Number: 91303 www.

9.4. Size:150K international rectifier
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PD -9.1255IRL630HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 200VLogic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5VRDS(on) = 0.40150C Operating TemperatureFast SwitchingEase of parallelingID = 9.0ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching,

9.5. Size:267K international rectifier
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PD - 97617IRL6342PbFHEXFET Power MOSFETVDS30 VVGS12 VRDS(on) max 14.6 m(@VGS = 4.5V)Qg (typical) 11 nCSO-8ID9.9 A(@TA = 25C)Applications Battery operated DC motor inverter MOSFET System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standard SO-8 Package Multi-Vendor CompatibilityRoHS Compliant Containing no Lead, no

9.6. Size:911K samsung
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Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

9.7. Size:18K samsung
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9.8. Size:2277K vishay
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IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing

9.9. Size:218K vishay
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IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a

9.10. Size:244K vishay
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