All MOSFET. IRF7NJZ44V Datasheet

 

IRF7NJZ44V MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7NJZ44V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: SMD-0.5

 IRF7NJZ44V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7NJZ44V Datasheet (PDF)

 ..1. Size:113K  international rectifier
 irf7njz44v.pdf

IRF7NJZ44V IRF7NJZ44V

PD - 94433HEXFET POWER MOSFET IRF7NJZ44VSURFACE MOUNT (SMD-0.5)60V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NJZ44V 60V 0.0165 22A*Seventh Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

 9.1. Size:172K  international rectifier
 irf7na2907.pdf

IRF7NJZ44V IRF7NJZ44V

PD-94337CHEXFET POWER MOSFET IRF7NA2907SURFACE MOUNT (SMD-2)75V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NA2907 75V 0.0045 75A*Seventh Generation HEXFET power MOSFETs fromSMD-2International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with then

 9.2. Size:196K  international rectifier
 irf7n1405.pdf

IRF7NJZ44V IRF7NJZ44V

PD - 94643AHEXFET POWER MOSFET IRF7N1405SURFACE MOUNT (SMD-1) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7N1405 55V 0.0053 55A*Seventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingSMD-1techniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa

 9.3. Size:1229K  cn sps
 smirf7n65.pdf

IRF7NJZ44V IRF7NJZ44V

SMIRF7N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3(VGS=10V, ID=3.5A) on-state resistance, provide superior s

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NP82N055MLE

 

 
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