SIHFPF30 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SIHFPF30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
   Package: TO-247AC

SIHFPF30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SIHFPF30 Datasheet (PDF)

..1. Size:1495K vishay
irfpf30 sihfpf30.pdf

IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian

..2. Size:1501K vishay
irfpf30pbf sihfpf30.pdf

8.1. Size:1633K vishay
irfpf40 sihfpf40.pdf

IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian

8.2. Size:1466K vishay
irfpf50 sihfpf50.pdf

IRFPF50, SiHFPF50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.6RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compli

8.3. Size:1640K vishay
irfpf40pbf sihfpf40.pdf