All MOSFET. SIHFZ10 Datasheet

 

SIHFZ10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHFZ10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-220AB

 SIHFZ10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHFZ10 Datasheet (PDF)

 ..1. Size:1167K  vishay
 irfz10 sihfz10.pdf

SIHFZ10 SIHFZ10

IRFZ10, SiHFZ10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 11 Ease of ParallelingQgs (nC) 3.1 Simple Drive RequirementsQgd (nC) 5.8 Compliant to RoHS Directive 2002/95/ECConfiguration Single

 ..2. Size:288K  vishay
 irfz10pbf sihfz10.pdf

SIHFZ10 SIHFZ10

IRFZ10, SiHFZ10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 11 Ease of ParallelingQgs (nC) 3.1 Simple Drive RequirementsQgd (nC) 5.8 Compliant to RoHS Directive 2002/95/ECConfiguration Single

 8.1. Size:333K  vishay
 irfz14s irfz14l sihfz14s sihfz14l.pdf

SIHFZ10 SIHFZ10

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw

 8.2. Size:324K  vishay
 irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf

SIHFZ10 SIHFZ10

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw

 8.3. Size:1583K  vishay
 irfz14 sihfz14.pdf

SIHFZ10 SIHFZ10

IRFZ14, SiHFZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingQg (Max.) (nC) 11 COMPLIANT Ease of ParallelingQgs (nC) 3.1Qgd (nC) 5.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 8.4. Size:376K  vishay
 irfz14s sihfz14s sihfz14l.pdf

SIHFZ10 SIHFZ10

IRFZ14S, SiHFZ14S, SiHFZ14Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESD Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S)I2PAK (TO-262)D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switchingAvailableG Material categorization: for definitions ofcompliance please see www.vishay.c

 8.5. Size:1586K  vishay
 sihfz14.pdf

SIHFZ10 SIHFZ10

IRFZ14, SiHFZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingQg (Max.) (nC) 11 COMPLIANT Ease of ParallelingQgs (nC) 3.1Qgd (nC) 5.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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