All MOSFET. SIHFZ14L Datasheet

 

SIHFZ14L Datasheet and Replacement


   Type Designator: SIHFZ14L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-262
 

 SIHFZ14L substitution

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SIHFZ14L Datasheet (PDF)

 ..1. Size:333K  vishay
irfz14s irfz14l sihfz14s sihfz14l.pdf pdf_icon

SIHFZ14L

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw

 ..2. Size:324K  vishay
irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf pdf_icon

SIHFZ14L

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw

 ..3. Size:376K  vishay
irfz14s sihfz14s sihfz14l.pdf pdf_icon

SIHFZ14L

IRFZ14S, SiHFZ14S, SiHFZ14Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESD Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S)I2PAK (TO-262)D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switchingAvailableG Material categorization: for definitions ofcompliance please see www.vishay.c

 7.1. Size:1583K  vishay
irfz14 sihfz14.pdf pdf_icon

SIHFZ14L

IRFZ14, SiHFZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingQg (Max.) (nC) 11 COMPLIANT Ease of ParallelingQgs (nC) 3.1Qgd (nC) 5.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

Datasheet: SIHFU9120 , SIHFU9210 , SIHFU9214 , SIHFU9220 , SIHFU9310 , SIHFUC20 , SIHFZ10 , SIHFZ14 , 12N60 , SIHFZ14S , SIHFZ20 , SIHFZ24 , SIHFZ24S , SIHFZ34 , SIHFZ34L , SIHFZ34S , SIHFZ40 .

Keywords - SIHFZ14L MOSFET datasheet

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