All MOSFET. SIHG17N60D Datasheet

 

SIHG17N60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHG17N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 277.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO-247AC

 SIHG17N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHG17N60D Datasheet (PDF)

 ..1. Size:187K  vishay
 sihg17n60d.pdf

SIHG17N60D SIHG17N60D

SiHG17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS

 7.1. Size:123K  vishay
 sihg17n80e.pdf

SIHG17N60D SIHG17N60D

SiHG17N80Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS)S Material categorization: for definitions of compliance DSplease see www.vishay.com/doc?99912GN-Chann

 9.1. Size:178K  vishay
 sihg14n50d.pdf

SIHG17N60D SIHG17N60D

SiHG14N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.4- Low Input Capacitance (Ciss)Qg (Max.) (nC) 58- Reduced Capacitive Switching LossesQgs (nC) 8- High Body Diode RuggednessQgd (nC) 14- Avalanche Energy Rated (UIS)

 9.2. Size:142K  vishay
 sihg16n50c.pdf

SIHG17N60D SIHG17N60D

SiHG16N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECDTO-247ACGSDGSN-Channel MOSFET

Datasheet: SIHFZ48 , SIHFZ48L , SIHFZ48R , SIHFZ48RL , SIHFZ48RS , SIHFZ48S , SIHG14N50D , SIHG16N50C , 13N50 , SIHG20N50C , SIHG20N50E , SIHG22N50D , SIHG22N60E , SIHG22N60S , SIHG22N65E , SIHG23N60E , SIHG24N65E .

 

 
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