All MOSFET. IRLI2203N Datasheet

 

IRLI2203N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLI2203N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 61 A

Maximum Junction Temperature (Tj): 150 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO220

IRLI2203N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLI2203N Datasheet (PDF)

1.1. irli2203n.pdf Size:113K _international_rectifier

IRLI2203N
IRLI2203N

PD - 9.1378A IRLI2203N PRELIMINARY HEXFET« Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.007? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 61A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

2.1. irli2203g.pdf Size:156K _international_rectifier

IRLI2203N
IRLI2203N

PD - 9.1092A IRLI2203G HEXFET« Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.010? Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.0V & 10V ID = 52A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques

5.1. irli2910.pdf Size:143K _international_rectifier

IRLI2203N
IRLI2203N

PD - 9.1384B IRLI2910 PRELIMINARY HEXFET« Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Isolated Package RDS(on) = 0.026? High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mm ID = 31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced process

5.2. irli2505.pdf Size:103K _international_rectifier

IRLI2203N
IRLI2203N

PD - 9.1327A IRLI2505 HEXFET« Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008? G Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID = 58A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t

Datasheet: IRLBA3803 , IRLBA3803/P , IRLBA3803P , IRLBL1304 , IRLD014 , IRLD024 , IRLD110 , IRLD120 , IRFP4229 , IRLI2505 , IRLI2910 , IRLI3705N , IRLI3803 , IRLI510A , IRLI520A , IRLI520N , IRLI530A .

 


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