All MOSFET. SIHG25N50E Datasheet

 

SIHG25N50E MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHG25N50E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 26 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 57 nC

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm

Package: TO-247AC

SIHG25N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHG25N50E Datasheet (PDF)

0.1. sihg25n50e.pdf Size:176K _vishay

SIHG25N50E
SIHG25N50E

SiHG25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

7.1. sihg25n40d.pdf Size:179K _vishay

SIHG25N50E
SIHG25N50E

SiHG25N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) at TJ max. 450DefinitionRDS(on) max. at 25 C () VGS = 10 V 0.17 Optimal DesignQg max. (nC) 88- Low Area Specific On-ResistanceQgs (nC) 12- Low Input Capacitance (Ciss)Qgd (nC) 23- Reduced Capacitive Switching LossesConf

 9.1. sihg22n65e.pdf Size:185K _vishay

SIHG25N50E
SIHG25N50E

SiHG22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction losses AvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) Availab

9.2. sihg24n65e.pdf Size:179K _vishay

SIHG25N50E
SIHG25N50E

SiHG24N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced Switching and Conduction LossesQg max. (nC) 122 Ultra Low Gate Charge (Qg)Qgs (nC) 21 Avalanche Energy Rated (UIS)Qgd (nC) 37

 9.3. sihg22n60e.pdf Size:182K _vishay

SIHG25N50E
SIHG25N50E

SiHG22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11Available Avalanche energy rated (UIS)Qgd (

9.4. sihg20n50c.pdf Size:181K _vishay

SIHG25N50E
SIHG25N50E

SiHG20N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) at TJ max. 560DefinitionRDS(on) ()VGS = 10 V 0.270 Low Figure-of-Merit Ron x QgQg (Max.) (nC) 76 100 % Avalanche TestedQgs (nC) 21 High Peak Current CapabilityQgd (nC) 34 dV/dt RuggednessConfiguration Single Improved Trr/Qrr Imp

 9.5. sihg28n65e.pdf Size:144K _vishay

SIHG25N50E
SIHG25N50E

SiHG28N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.122 Reduced switching and conduction lossesQg max. (nC) 140 Ultra low gate charge (Qg)Qgs (nC) 21 Avalanche energy rated (UIS)Qgd (nC) 37

9.6. sihg28n60ef.pdf Size:176K _vishay

SIHG25N50E
SIHG25N50E

SiHG28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switc

9.7. sihg20n50e.pdf Size:175K _vishay

SIHG25N50E
SIHG25N50E

SiHG20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

9.8. sihg22n60s.pdf Size:184K _vishay

SIHG25N50E
SIHG25N50E

SiHG22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation oneVDS at TJ max. (V) 650 High EAR capabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower figure-of-merit Ron x QgQg max. (nC) 98 100 % avalanche testedQgs (nC) 17AvailableQgd (nC) 25 Ultra low RonConfiguration Single dV/dt ruggedness U

9.9. sihg23n60e.pdf Size:184K _vishay

SIHG25N50E
SIHG25N50E

SiHG23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16 Avalanche energy rated (UIS)Qgd (nC) 25

9.10. sihg22n50d.pdf Size:180K _vishay

SIHG25N50E
SIHG25N50E

SiHG22N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.230- Low Input Capacitance (Ciss)Qg max. (nC) 98- Reduced Capacitive Switching LossesQgs (nC) 13- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS)

9.11. sihg20n50c.pdf Size:376K _inchange_semiconductor

SIHG25N50E
SIHG25N50E

isc N-Channel MOSFET Transistor SIHG20N50CFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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