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SIHG25N50E Spec and Replacement


   Type Designator: SIHG25N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TO-247AC

 SIHG25N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHG25N50E Specs

 ..1. Size:176K  vishay
sihg25n50e.pdf pdf_icon

SIHG25N50E

SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.145 Reduced switching and conduction losses Qg (Max.) (nC) 86 Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 Avalanche energy rated (UIS) Config... See More ⇒

 7.1. Size:179K  vishay
sihg25n40d.pdf pdf_icon

SIHG25N50E

SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 450 Definition RDS(on) max. at 25 C ( ) VGS = 10 V 0.17 Optimal Design Qg max. (nC) 88 - Low Area Specific On-Resistance Qgs (nC) 12 - Low Input Capacitance (Ciss) Qgd (nC) 23 - Reduced Capacitive Switching Losses Conf... See More ⇒

 9.1. Size:182K  vishay
sihg22n60e.pdf pdf_icon

SIHG25N50E

SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Available Avalanche energy rated (UIS) Qgd (... See More ⇒

 9.2. Size:185K  vishay
sihg22n65e.pdf pdf_icon

SIHG25N50E

SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Availab... See More ⇒

Detailed specifications: SIHG20N50E , SIHG22N50D , SIHG22N60E , SIHG22N60S , SIHG22N65E , SIHG23N60E , SIHG24N65E , SIHG25N40D , 2SK3568 , SIHG28N60EF , SIHG28N65E , SIHG30N60E , SIHG32N50D , SIHG33N60E , SIHG33N60EF , SIHG460B , SIHG47N60E .

History: SK07N65B-TF

Keywords - SIHG25N50E MOSFET specs

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