All MOSFET. SIHG33N60E Datasheet

 

SIHG33N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHG33N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO-247AC

 SIHG33N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHG33N60E Datasheet (PDF)

 ..1. Size:147K  vishay
 sihg33n60e.pdf

SIHG33N60E SIHG33N60E

SiHG33N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM): Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.099 Reducted Switching and Conduction LossesQg (Max.) (nC) 150 Ultra Low Gate Charge (Qg)Qgs (nC) 24Qgd (nC) 42 Avalanche Energy Rated (UIS

 0.1. Size:176K  vishay
 sihg33n60ef.pdf

SIHG33N60E SIHG33N60E

SiHG33N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.098 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 155 Low input capacitance (Ciss)Qgs (nC) 22 Reduced s

 9.1. Size:179K  vishay
 sihg32n50d.pdf

SIHG33N60E SIHG33N60E

SiHG32N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.150- Low Input Capacitance (Ciss)Qg max. (nC) 96- Reduced Capacitive Switching LossesQgs (nC) 18- High Body Diode RuggednessQgd (nC) 29- Avalanche Energy Rated (UIS)

 9.2. Size:177K  vishay
 sihg30n60e.pdf

SIHG33N60E SIHG33N60E

SiHG30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced switching and conduction lossesQg max. (nC) 130 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) AvailableQgd (

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFSL4310PBF

 

 
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