SIHH21N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHH21N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 93 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.176 Ohm
Package: POWERPAK8X8
SIHH21N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHH21N60E Datasheet (PDF)
sihh21n60e.pdf
SiHH21N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.153 Low input capacitance (Ciss)Qg max. (nC) 83 Reduced switching and conduction lossesQgs (nC) 11Qgd (nC) 20 Ultra low gate charge (Qg)Conf
sihh27n60ef.pdf
SiHH27N60EFwww.vishay.comVishay SiliconixE Series Power MOSFET With Fast Body DiodeFEATURESPin 4 Completely lead (Pb)-free devicePowerPAK 8 x 8 Low figure-of-merit (FOM) Ron x QgPin 1 Low input capacitance (Ciss)4 Reduced switching and conduction lossesPin 21 Ultra low gate charge (Qg)2 Avalanche energy rated (UIS)33 Pin 3 Kelvin co
sihh26n60e.pdf
SiHH26N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.117 Low input capacitance (Ciss)Qg max. (nC) 116 Reduced switching and conduction lossesQgs (nC) 18Qgd (nC) 33 Ultra low gate charge (Qg)Con
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
