2SJ326 PDF Specs and Replacement
Type Designator: 2SJ326
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TO252
2SJ326 substitution
2SJ326 PDF Specs
2sj320.pdf
Ordering number EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ320] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO... See More ⇒
2sj324-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 , 2SJ303 , 2SJ324 , 2SJ325 , IRF530 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , 2SJ331 , 2SJ353 , 2SJ411 , 2SJ424 .
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
