All MOSFET. SIHP12N60E Datasheet

 

SIHP12N60E Datasheet and Replacement


   Type Designator: SIHP12N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220AB
 

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SIHP12N60E Datasheet (PDF)

 ..1. Size:210K  vishay
 sihp12n60e.pdf pdf_icon

SIHP12N60E

SiHP12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced Switching and Conduction LossesQg max. (nC) 58 Ultra Low Gate Charge (Qg)Qgs (nC) 6 Avalanche Energy Rated (UIS)Qgd (nC) 13

 6.1. Size:167K  vishay
 sihp12n65e.pdf pdf_icon

SIHP12N60E

SiHP12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M

 7.1. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf pdf_icon

SIHP12N60E

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK

 7.2. Size:158K  vishay
 sihp12n50e.pdf pdf_icon

SIHP12N60E

SiHP12N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.380 Reduced switching and conduction lossesQg max. (nC) 50 Low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 10 Materi

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Datasheet: SIHLZ34 , SIHLZ34L , SIHLZ34S , SIHLZ44 , SIHLZ44S , SIHP10N40D , SIHP12N50C , SIHP12N50E , 8205A , SIHP12N65E , SIHP14N50D , SIHP15N50E , SIHP15N60E , SIHP15N65E , SIHP16N50C , SIHP17N60D , SIHP18N50C .

History: IRFZ44R | IRFS3006-7PPBF | IRF5305LPBF

Keywords - SIHP12N60E MOSFET datasheet

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