SIHP20N50E Datasheet: MOSFET, N-Ch, 500V, 19A. Full specification with pinout and replacement list

SIHP20N50E Datasheet. Specs and Replacement

Type Designator: SIHP20N50E 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 46 nC

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.184 Ohm

Package: TO-220AB

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SIHP20N50E datasheet

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