IRLI530N Datasheet and Replacement
Type Designator: IRLI530N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220F
IRLI530N substitution
IRLI530N Datasheet (PDF)
irli530n.pdf

PD - 9.1350BIRLI530NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.10 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ach
irli530npbf.pdf

IRLI530NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.10 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 12A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
irli530npbf.pdf

IRLI530NPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.086 f = 60 Hz)RoHS Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low Thermal R
Datasheet: IRLI2505 , IRLI2910 , IRLI3705N , IRLI3803 , IRLI510A , IRLI520A , IRLI520N , IRLI530A , IRF540 , IRLI540A , IRLI540N , IRLI610A , IRLI620A , IRLI620G , IRLI630A , IRLI630G , IRLI640A .
History: IXTP3N90A | FDY4000CZ
Keywords - IRLI530N MOSFET datasheet
IRLI530N cross reference
IRLI530N equivalent finder
IRLI530N lookup
IRLI530N substitution
IRLI530N replacement
History: IXTP3N90A | FDY4000CZ



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