SIHP33N60E Datasheet and Replacement
Type Designator: SIHP33N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 156 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO-220AB
SIHP33N60E substitution
SIHP33N60E Datasheet (PDF)
sihp33n60e.pdf
SiHP33N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM): Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.099 Reducted Switching and Conduction LossesQg (Max.) (nC) 150 Ultra Low Gate Charge (Qg)Qgs (nC) 24Qgd (nC) 42 Avalanche Energy Rated (UIS
sihp33n60ef.pdf
SiHP33N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.098 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 155 Low input capacitance (Ciss)Qgs (nC) 22 Reduced s
sihp30n60e.pdf
SiHP30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39
Datasheet: SIHP22N65E , SIHP23N60E , SIHP24N65E , SIHP25N40D , SIHP25N50E , SIHP28N60EF , SIHP28N65E , SIHP30N60E , IRF530 , SIHP33N60EF , SIHP5N50D , SIHP6N40D , SIHP6N65E , SIHP7N60E , SIHP8N50D , SIHS20N50C , SIHS36N50D .
Keywords - SIHP33N60E MOSFET datasheet
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SIHP33N60E replacement
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