All MOSFET. SIHP6N65E Datasheet

 

SIHP6N65E Datasheet and Replacement


   Type Designator: SIHP6N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-220AB
 
   - MOSFET ⓘ Cross-Reference Search

 

SIHP6N65E Datasheet (PDF)

 ..1. Size:166K  vishay
 sihp6n65e.pdf pdf_icon

SIHP6N65E

SiHP6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat

 8.1. Size:214K  vishay
 sihp6n40d.pdf pdf_icon

SIHP6N65E

SiHP6N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.0- Low Input Capacitance (Ciss)Qg max. (nC) 18- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 4- Avalanche Energy Rated (UIS)Conf

Datasheet: SIHP25N50E , SIHP28N60EF , SIHP28N65E , SIHP30N60E , SIHP33N60E , SIHP33N60EF , SIHP5N50D , SIHP6N40D , 20N50 , SIHP7N60E , SIHP8N50D , SIHS20N50C , SIHS36N50D , SIHU3N50D , SIHU3N50DA , SIHU5N50D , SIHU6N62E .

Keywords - SIHP6N65E MOSFET datasheet

 SIHP6N65E cross reference
 SIHP6N65E equivalent finder
 SIHP6N65E lookup
 SIHP6N65E substitution
 SIHP6N65E replacement

 

 
Back to Top

 


 
.