SIHP6N65E Specs and Replacement

Type Designator: SIHP6N65E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220AB

SIHP6N65E substitution

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SIHP6N65E datasheet

 ..1. Size:166K  vishay
 sihp6n65e.pdf pdf_icon

SIHP6N65E

SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced switching and conduction losses Qg max. (nC) 48 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 11 Mat... See More ⇒

 8.1. Size:214K  vishay
 sihp6n40d.pdf pdf_icon

SIHP6N65E

SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.0 - Low Input Capacitance (Ciss) Qg max. (nC) 18 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 4 - Avalanche Energy Rated (UIS) Conf... See More ⇒

Detailed specifications: SIHP25N50E, SIHP28N60EF, SIHP28N65E, SIHP30N60E, SIHP33N60E, SIHP33N60EF, SIHP5N50D, SIHP6N40D, STP80NF70, SIHP7N60E, SIHP8N50D, SIHS20N50C, SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E

Keywords - SIHP6N65E MOSFET specs

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