SIHP6N65E MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHP6N65E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-220AB
SIHP6N65E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHP6N65E Datasheet (PDF)
sihp6n65e.pdf
SiHP6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat
sihp6n40d.pdf
SiHP6N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.0- Low Input Capacitance (Ciss)Qg max. (nC) 18- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 4- Avalanche Energy Rated (UIS)Conf
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