SIHP7N60E Specs and Replacement

Type Designator: SIHP7N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220AB

SIHP7N60E substitution

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SIHP7N60E datasheet

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SIHP7N60E

SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced Switching and Conduction Losses Qg max. (nC) 40 Ultra Low Gate Charge (Qg) Qgs (nC) 5 Avalanche Energy Rated (UIS) Qgd (nC) 9 Mate... See More ⇒

Detailed specifications: SIHP28N60EF, SIHP28N65E, SIHP30N60E, SIHP33N60E, SIHP33N60EF, SIHP5N50D, SIHP6N40D, SIHP6N65E, IRFP450, SIHP8N50D, SIHS20N50C, SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, SIHU6N65E

Keywords - SIHP7N60E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.