All MOSFET. SIHU5N50D Datasheet

 

SIHU5N50D MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHU5N50D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 104 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 34 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO-251

SIHU5N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHU5N50D Datasheet (PDF)

0.1. sihu5n50d.pdf Size:179K _vishay

SIHU5N50D
SIHU5N50D

SiHU5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 1.5 - Low Input Capacitance (Ciss) Qg (max.) (nC) 20 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 5 - Avalanche Energy Rated (UIS) •

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