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SIHU5N50D PDF Specs and Replacement


   Type Designator: SIHU5N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-251
 

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SIHU5N50D PDF Specs

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SIHU5N50D

SiHU5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.5 - Low Input Capacitance (Ciss) Qg (max.) (nC) 20 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 5 - Avalanche Energy Rated (UIS) ... See More ⇒

Detailed specifications: SIHP6N40D , SIHP6N65E , SIHP7N60E , SIHP8N50D , SIHS20N50C , SIHS36N50D , SIHU3N50D , SIHU3N50DA , IRF1407 , SIHU6N62E , SIHU6N65E , SIHU7N60E , SIHW30N60E , SIHW33N60E , SIHW47N60E , SIHW73N60E , FMA49N20T2 .

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