All MOSFET. SIHU5N50D Datasheet

 

SIHU5N50D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHU5N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-251

 SIHU5N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHU5N50D Datasheet (PDF)

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 sihu5n50d.pdf

SIHU5N50D SIHU5N50D

SiHU5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5 - Avalanche Energy Rated (UIS)

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