All MOSFET. FMC06N60ES Datasheet

 

FMC06N60ES Datasheet and Replacement


   Type Designator: FMC06N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: T-PACK-S
 

 FMC06N60ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMC06N60ES Datasheet (PDF)

 ..1. Size:490K  fuji
 fmc06n60es.pdf pdf_icon

FMC06N60ES

FMC06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5

Datasheet: SIHW47N60E , SIHW73N60E , FMA49N20T2 , FMB16N50E , FMB80N10T2 , FMC03N60E , FMC05N50E , FMC05N60E , K2611 , FMC07N50E , FMC10N60E , FMC11N60E , FMC12N50E , FMC12N50ES , FMC12N60ES , FMC13N60E , FMC13N60ES .

History: MMFTN2302 | ME120N10T-G | FS10VS-9A | IRF6668PBF | FQP9N50C | 2SK1500 | BRI630

Keywords - FMC06N60ES MOSFET datasheet

 FMC06N60ES cross reference
 FMC06N60ES equivalent finder
 FMC06N60ES lookup
 FMC06N60ES substitution
 FMC06N60ES replacement

 

 
Back to Top

 


 
.