FMC06N60ES Specs and Replacement

Type Designator: FMC06N60ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: T-PACK-S

FMC06N60ES substitution

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FMC06N60ES datasheet

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FMC06N60ES

FMC06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7 0.5... See More ⇒

Detailed specifications: SIHW47N60E, SIHW73N60E, FMA49N20T2, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E, 8N60, FMC07N50E, FMC10N60E, FMC11N60E, FMC12N50E, FMC12N50ES, FMC12N60ES, FMC13N60E, FMC13N60ES

Keywords - FMC06N60ES MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.