FMC11N60E Specs and Replacement

Type Designator: FMC11N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: T-PACK-S

FMC11N60E substitution

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FMC11N60E datasheet

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FMC11N60E

FMC11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

Detailed specifications: FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E, FMC06N60ES, FMC07N50E, FMC10N60E, AO3400A, FMC12N50E, FMC12N50ES, FMC12N60ES, FMC13N60E, FMC13N60ES, FMC16N50E, FMC16N50ES, FMC16N60E

Keywords - FMC11N60E MOSFET specs

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