All MOSFET. FMC11N60E Datasheet

 

FMC11N60E Datasheet and Replacement


   Type Designator: FMC11N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: T-PACK-S
 

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FMC11N60E Datasheet (PDF)

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FMC11N60E

FMC11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: FMB16N50E , FMB80N10T2 , FMC03N60E , FMC05N50E , FMC05N60E , FMC06N60ES , FMC07N50E , FMC10N60E , RU6888R , FMC12N50E , FMC12N50ES , FMC12N60ES , FMC13N60E , FMC13N60ES , FMC16N50E , FMC16N50ES , FMC16N60E .

History: IXFK170N20P | IPD034N06N3

Keywords - FMC11N60E MOSFET datasheet

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