FMC16N60ES Datasheet and Replacement
Type Designator: FMC16N60ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: T-PACK-S
FMC16N60ES substitution
FMC16N60ES Datasheet (PDF)
fmc16n60es.pdf

FMC16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5
fmc16n60e.pdf

FMC16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmc16n50es.pdf

FMC16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.
fmc16n50e.pdf

FMC16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
Datasheet: FMC12N50E , FMC12N50ES , FMC12N60ES , FMC13N60E , FMC13N60ES , FMC16N50E , FMC16N50ES , FMC16N60E , AON7403 , FMC20N50E , FMC20N50ES , FMC80N10T2 , FMH06N80E , FMH06N90E , FMH07N90E , FMH09N90E , FMH11N90E .
History: SRT10N160LD56 | SRT08N025HC56TR-G | RU3710R | RD3H045SP | RU30L40M-C | SIZ346DT | STH275N8F7-2AG
Keywords - FMC16N60ES MOSFET datasheet
FMC16N60ES cross reference
FMC16N60ES equivalent finder
FMC16N60ES lookup
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FMC16N60ES replacement
History: SRT10N160LD56 | SRT08N025HC56TR-G | RU3710R | RD3H045SP | RU30L40M-C | SIZ346DT | STH275N8F7-2AG



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