FMC20N50ES Specs and Replacement

Type Designator: FMC20N50ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: T-PACK-S

FMC20N50ES substitution

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FMC20N50ES datasheet

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FMC20N50ES

FMC20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.... See More ⇒

 5.1. Size:369K  fuji
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FMC20N50ES

FMC20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

Detailed specifications: FMC12N60ES, FMC13N60E, FMC13N60ES, FMC16N50E, FMC16N50ES, FMC16N60E, FMC16N60ES, FMC20N50E, AON7403, FMC80N10T2, FMH06N80E, FMH06N90E, FMH07N90E, FMH09N90E, FMH11N90E, FMH13N60ES, FMH16N50E

Keywords - FMC20N50ES MOSFET specs

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