IRLI620G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLI620G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16(max)
nC
trⓘ - Rise Time: 31
nS
Cossⓘ -
Output Capacitance: 91
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO220F
IRLI620G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLI620G
Datasheet (PDF)
..1. Size:1411K international rectifier
irli620gpbf.pdf 
PD- 95753IRLI620GPbF Lead-Freewww.irf.com 18/23/04IRLI620GPbF2 www.irf.comIRLI620GPbFwww.irf.com 3IRLI620GPbF4 www.irf.comIRLI620GPbFwww.irf.com 5IRLI620GPbF6 www.irf.comIRLI620GPbFwww.irf.com 7IRLI620GPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationEXAMPLE: THIS IS AN IRFI8
..2. Size:157K international rectifier
irli620g.pdf
PD - 9.1235IRLI620GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.80RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 4.0ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast
..3. Size:1895K vishay
irli620g sihli620g.pdf
IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V
9.2. Size:153K international rectifier
irli640g.pdf
PD - 9.1237IRLI640GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.18RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 9.9ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast
9.3. Size:1413K international rectifier
irli630gpbf.pdf
PD- 95653IRLI630GPbF Lead-Freewww.irf.com 17/26/04IRLI630GPbF2 www.irf.comIRLI630GPbFwww.irf.com 3IRLI630GPbF4 www.irf.comIRLI630GPbFwww.irf.com 5IRLI630GPbF6 www.irf.comIRLI630GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+
9.4. Size:156K international rectifier
irli630g.pdf
PD - 9.1236IRLI630GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.40RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 6.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast
9.5. Size:1231K international rectifier
irli640gpbf.pdf
PD- 95654IRLI640GPbF Lead-Free7/26/04Document Number: 91314 www.vishay.com1IRLI640GPbFDocument Number: 91314 www.vishay.com2IRLI640GPbFDocument Number: 91314 www.vishay.com3IRLI640GPbFDocument Number: 91314 www.vishay.com4IRLI640GPbFDocument Number: 91314 www.vishay.com5IRLI640GPbFDocument Number: 91314 www.vishay.com6IRLI640GPbFPeak Diode Re
9.6. Size:234K fairchild semi
irlw610a irli610a.pdf
IRLW/I610AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.)112331. Gate 2. Drain
9.7. Size:226K fairchild semi
irlw630a irli630a.pdf
IRLW/I630AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.)112331. Gate 2. Drain 3
9.8. Size:1706K vishay
irli640g sihli640g.pdf
IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38
9.9. Size:1708K vishay
irli640gpbf sihli640g.pdf
IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38
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