FMH19N60ES Specs and Replacement
Type Designator: FMH19N60ES
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 315 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.365 Ohm
Package: TO-3P-Q
FMH19N60ES substitution
- MOSFET ⓘ Cross-Reference Search
FMH19N60ES datasheet
fmh19n60es.pdf
FMH19N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V... See More ⇒
fmh19n60e.pdf
FMH19N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒
Detailed specifications: FMH09N90E, FMH11N90E, FMH13N60ES, FMH16N50E, FMH16N50ES, FMH16N60ES, FMH17N60ES, FMH19N60E, IRF740, FMH20N50E, FMH20N50ES, FMH21N50ES, FMH23N50ES, FMH23N60E, FMH23N60ES, FMH28N50E, FMH28N50ES
Keywords - FMH19N60ES MOSFET specs
FMH19N60ES cross reference
FMH19N60ES equivalent finder
FMH19N60ES pdf lookup
FMH19N60ES substitution
FMH19N60ES replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
