FMH23N60E Specs and Replacement

Type Designator: FMH23N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-3P-Q

FMH23N60E substitution

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FMH23N60E datasheet

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FMH23N60E

FMH23N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒

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FMH23N60E

FMH23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V... See More ⇒

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FMH23N60E

FMH23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5... See More ⇒

 8.2. Size:448K  fuji
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FMH23N60E

FMH23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒

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Detailed specifications: FMH16N60ES, FMH17N60ES, FMH19N60E, FMH19N60ES, FMH20N50E, FMH20N50ES, FMH21N50ES, FMH23N50ES, 50N06, FMH23N60ES, FMH28N50E, FMH28N50ES, FMH30N60S1, FMH47N60S1, FMI03N60E, FMI05N50E, FMI05N60E

Keywords - FMH23N60E MOSFET specs

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