All MOSFET. FMI03N60E Datasheet

 

FMI03N60E Datasheet and Replacement


   Type Designator: FMI03N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21.5 nC
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: T-PACK-L
 

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FMI03N60E Datasheet (PDF)

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FMI03N60E

FMI03N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: FMH21N50ES , FMH23N50ES , FMH23N60E , FMH23N60ES , FMH28N50E , FMH28N50ES , FMH30N60S1 , FMH47N60S1 , IRFP260N , FMI05N50E , FMI05N60E , FMI06N60ES , FMI07N50E , FMI10N60E , FMI11N60E , FMI12N50E , FMI12N50ES .

History: SRM20N65TC

Keywords - FMI03N60E MOSFET datasheet

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