FMI03N60E Specs and Replacement

Type Designator: FMI03N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: T-PACK-L

FMI03N60E substitution

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FMI03N60E datasheet

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FMI03N60E

FMI03N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

Detailed specifications: FMH21N50ES, FMH23N50ES, FMH23N60E, FMH23N60ES, FMH28N50E, FMH28N50ES, FMH30N60S1, FMH47N60S1, IRFB4110, FMI05N50E, FMI05N60E, FMI06N60ES, FMI07N50E, FMI10N60E, FMI11N60E, FMI12N50E, FMI12N50ES

Keywords - FMI03N60E MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs