All MOSFET. FMI06N60ES Datasheet

 

FMI06N60ES Datasheet and Replacement


   Type Designator: FMI06N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: T-PACK-L
 

 FMI06N60ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMI06N60ES Datasheet (PDF)

 ..1. Size:489K  fuji
 fmi06n60es.pdf pdf_icon

FMI06N60ES

FMI06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5

Datasheet: FMH23N60ES , FMH28N50E , FMH28N50ES , FMH30N60S1 , FMH47N60S1 , FMI03N60E , FMI05N50E , FMI05N60E , IRF3710 , FMI07N50E , FMI10N60E , FMI11N60E , FMI12N50E , FMI12N50ES , FMI12N60ES , FMI13N60E , FMI13N60ES .

Keywords - FMI06N60ES MOSFET datasheet

 FMI06N60ES cross reference
 FMI06N60ES equivalent finder
 FMI06N60ES lookup
 FMI06N60ES substitution
 FMI06N60ES replacement

 

 
Back to Top

 


 
.