FMI06N60ES Specs and Replacement

Type Designator: FMI06N60ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: T-PACK-L

FMI06N60ES substitution

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FMI06N60ES datasheet

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FMI06N60ES

FMI06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7 0.5... See More ⇒

Detailed specifications: FMH23N60ES, FMH28N50E, FMH28N50ES, FMH30N60S1, FMH47N60S1, FMI03N60E, FMI05N50E, FMI05N60E, AO3400, FMI07N50E, FMI10N60E, FMI11N60E, FMI12N50E, FMI12N50ES, FMI12N60ES, FMI13N60E, FMI13N60ES

Keywords - FMI06N60ES MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.