All MOSFET. FML16N60ES Datasheet

 

FML16N60ES Datasheet and Replacement


   Type Designator: FML16N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TFP
 

 FML16N60ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

FML16N60ES Datasheet (PDF)

 ..1. Size:311K  fuji
 fml16n60es.pdf pdf_icon

FML16N60ES

http://www.fujisemi.comFML16N60ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

 8.1. Size:286K  fuji
 fml16n50es.pdf pdf_icon

FML16N60ES

http://www.fujisemi.comFML16N50ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

Datasheet: FMI16N60ES , FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , FML12N60ES , FML13N60ES , FML16N50ES , AO3400 , FML20N50ES , FS100KMJ-03F , FS100UMJ-03F , FS100VSJ-03F , FS10AS-06 , FS10AS-2 , FS10AS-3 , FS10ASJ-06F .

History: AFC3326WS | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36

Keywords - FML16N60ES MOSFET datasheet

 FML16N60ES cross reference
 FML16N60ES equivalent finder
 FML16N60ES lookup
 FML16N60ES substitution
 FML16N60ES replacement

 

 
Back to Top

 


 
.