FS100KMJ-03F Specs and Replacement
Type Designator: FS100KMJ-03F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
Cossⓘ -
Output Capacitance: 2300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220FN
FS100KMJ-03F substitution
- MOSFET ⓘ Cross-Reference Search
FS100KMJ-03F datasheet
..1. Size:206K renesas
fs100kmj-03f.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.1. Size:113K renesas
fs100vsj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.2. Size:112K renesas
fs100umj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.3. Size:449K infineon
fs100r12ke3.pdf
Technische Information / Technical Information IGBT-Module FS100R12KE3 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A C vj max C nom Continuous DC collector current T = 25 C, T = 150 C I 140 A ... See More ⇒
9.4. Size:617K infineon
ifs100v12pt4.pdf
Technical Information MIPAQ serve IFS100V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 100A Load type Inductive, resistive Industrial drives, UPS, solar Typical applications inverters, auxiliary inverters tem... See More ⇒
9.5. Size:505K infineon
fs100r12kt4g.pdf
Technische Information / Technical Information IGBT-Module FS100R12KT4G IGBT-modules EconoPACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK 3 module with trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspan... See More ⇒
9.6. Size:981K infineon
fs100r12w2t7.pdf
FS100R12W2T7 EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und NTC EasyPACK module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and NTC Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Potentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditionin... See More ⇒
9.7. Size:457K infineon
fs100r17ke3.pdf
Technische Information / Technical Information IGBT-Module FS100R17KE3 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A C vj max C nom Continuous DC collector cu... See More ⇒
9.8. Size:696K infineon
ifs100b12n3e4-b31.pdf
Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B31 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Typ... See More ⇒
9.9. Size:452K infineon
fs100r12kt3.pdf
Technische Information / Technical Information IGBT-Module FS100R12KT3 IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK 3 with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-... See More ⇒
9.10. Size:662K infineon
ifs100b12n3e4 b39.pdf
Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B39 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C ... See More ⇒
9.11. Size:441K infineon
fs100r12ks4.pdf
Technische Information / Technical Information IGBT-Module FS100R12KS4 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70 C, T = 150 C I 100 A C vj max C nom Continuous DC collector cu... See More ⇒
9.12. Size:513K infineon
fs100r06ke3.pdf
Technische Information / Technical Information IGBT-Module FS100R06KE3 IGBT-modules EconoPACK 3 mit schnellem Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoPACK 3 with fast trench/fieldstop IGBT and Emitter Controlled3 diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrsp... See More ⇒
9.13. Size:893K infineon
ifs100b12n3e4 b31.pdf
/ Technical Information IGBT- IFS100B12N3E4_B31 IGBT-modules MIPAQ base / IGBT4 and HE diode and MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shun... See More ⇒
9.14. Size:737K infineon
fs100r12w2t7-b11.pdf
FS100R12W2T7_B11 EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT / NTC EasyPACK module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Potentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaa... See More ⇒
Detailed specifications: FMI20N50ES
, FMI80N10T2
, FML12N50ES
, FML12N60ES
, FML13N60ES
, FML16N50ES
, FML16N60ES
, FML20N50ES
, IRFP260
, FS100UMJ-03F
, FS100VSJ-03F
, FS10AS-06
, FS10AS-2
, FS10AS-3
, FS10ASJ-06F
, FS10ASJ-2
, FS10ASJ-3
.
Keywords - FS100KMJ-03F MOSFET specs
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