FS100KMJ-03F
MOSFET. Datasheet pdf. Equivalent
Type Designator: FS100KMJ-03F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 170
nS
Cossⓘ -
Output Capacitance: 2300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TO-220FN
FS100KMJ-03F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FS100KMJ-03F
Datasheet (PDF)
..1. Size:206K renesas
fs100kmj-03f.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:113K renesas
fs100vsj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.2. Size:112K renesas
fs100umj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:449K infineon
fs100r12ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KE3IGBT-modulesIGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 AC vj max C nomContinuous DC collector current T = 25C, T = 150C I 140 A
9.4. Size:617K infineon
ifs100v12pt4.pdf
Technical Information MIPAQ serve IFS100V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 100A Load type Inductive, resistive Industrial drives, UPS, solar Typical applications inverters, auxiliary inverters tem
9.5. Size:505K infineon
fs100r12kt4g.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KT4GIGBT-modulesEconoPACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK3 module with trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspan
9.6. Size:981K infineon
fs100r12w2t7.pdf
FS100R12W2T7EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und NTCEasyPACK module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMPotentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditionin
9.7. Size:457K infineon
fs100r17ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R17KE3IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 AC vj max C nomContinuous DC collector cu
9.8. Size:696K infineon
ifs100b12n3e4-b31.pdf
Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTyp
9.9. Size:452K infineon
fs100r12kt3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KT3IGBT-modulesEconoPACK3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK3 with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-
9.10. Size:662K infineon
ifs100b12n3e4 b39.pdf
Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B39IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and currentsense shuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC
9.11. Size:441K infineon
fs100r12ks4.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 70C, T = 150C I 100 AC vj max C nomContinuous DC collector cu
9.12. Size:513K infineon
fs100r06ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R06KE3IGBT-modulesEconoPACK3 mit schnellem Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoPACK3 with fast trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrsp
9.13. Size:893K infineon
ifs100b12n3e4 b31.pdf
/ Technical InformationIGBT-IFS100B12N3E4_B31IGBT-modulesMIPAQbase / IGBT4 and HE diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshun
9.14. Size:737K infineon
fs100r12w2t7-b11.pdf
FS100R12W2T7_B11EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT / NTCEasyPACK module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMPotentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaa
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