FS10ASJ-3 Specs and Replacement

Type Designator: FS10ASJ-3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: MP-3A

FS10ASJ-3 substitution

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FS10ASJ-3 datasheet

 ..1. Size:216K  renesas
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FS10ASJ-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 6.1. Size:115K  renesas
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FS10ASJ-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 6.2. Size:217K  renesas
 fs10asj-2.pdf pdf_icon

FS10ASJ-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 6.3. Size:844K  cn vbsemi
 fs10asj-06f.pdf pdf_icon

FS10ASJ-3

FS10ASJ-06F www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo... See More ⇒

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Detailed specifications: FS100KMJ-03F, FS100UMJ-03F, FS100VSJ-03F, FS10AS-06, FS10AS-2, FS10AS-3, FS10ASJ-06F, FS10ASJ-2, 5N65, FS10SM-10, FS10SM-12, FS10SM-16A, FS10SM-18A, FS10VS-9A, FS14SM-10, FS14SM-12, FS14SM-14A

Keywords - FS10ASJ-3 MOSFET specs

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