FSS273 MOSFET. Datasheet pdf. Equivalent
Type Designator: FSS273
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP-8
FSS273 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSS273 Datasheet (PDF)
fss273-tl-e.pdf
Ordering number : ENA0329 FSS273SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFSS273ApplicationsFeatures Motor drive applications. Inverter drive applications. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGS
fss275-tl-e.pdf
Ordering number : ENA0732 FSS275SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFSS275ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 6 ADrai
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
