IRLIZ34N Datasheet and Replacement
Type Designator: IRLIZ34N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO220F
- MOSFET Cross-Reference Search
IRLIZ34N Datasheet (PDF)
irliz34n.pdf

PD - 9.1329BIRLIZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 22ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelow
irliz34npbf.pdf

PD - 95455IRLIZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.035l Fully Avalanche Rated Gl Lead-FreeID = 22ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing technique
irliz34gpbf.pdf

PD- 95656IRLIZ34GPbF Lead-Free7/26/04Document Number: 91317 www.vishay.com1IRLIZ34GPbFDocument Number: 91317 www.vishay.com2IRLIZ34GPbFDocument Number: 91317 www.vishay.com3IRLIZ34GPbFDocument Number: 91317 www.vishay.com4IRLIZ34GPbFDocument Number: 91317 www.vishay.com5IRLIZ34GPbFDocument Number: 91317 www.vishay.com6IRLIZ34GPbFPeak Diode Re
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MTB13N03Q8 | BUK101-50GL | BSC150N03LD | GSM4936S | KND2804A | WSF35P06 | ATM2N65TE
Keywords - IRLIZ34N MOSFET datasheet
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History: MTB13N03Q8 | BUK101-50GL | BSC150N03LD | GSM4936S | KND2804A | WSF35P06 | ATM2N65TE



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