All MOSFET. IRLIZ34N Datasheet

 

IRLIZ34N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLIZ34N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25(max) nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO220F

 IRLIZ34N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLIZ34N Datasheet (PDF)

 ..1. Size:105K  international rectifier
 irliz34n.pdf

IRLIZ34N IRLIZ34N

PD - 9.1329BIRLIZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 22ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelow

 ..2. Size:258K  international rectifier
 irliz34npbf.pdf

IRLIZ34N IRLIZ34N

PD - 95455IRLIZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.035l Fully Avalanche Rated Gl Lead-FreeID = 22ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

 7.1. Size:349K  1
 irliz34a irlw34a.pdf

IRLIZ34N IRLIZ34N

 7.2. Size:1006K  international rectifier
 irliz34gpbf.pdf

IRLIZ34N IRLIZ34N

PD- 95656IRLIZ34GPbF Lead-Free7/26/04Document Number: 91317 www.vishay.com1IRLIZ34GPbFDocument Number: 91317 www.vishay.com2IRLIZ34GPbFDocument Number: 91317 www.vishay.com3IRLIZ34GPbFDocument Number: 91317 www.vishay.com4IRLIZ34GPbFDocument Number: 91317 www.vishay.com5IRLIZ34GPbFDocument Number: 91317 www.vishay.com6IRLIZ34GPbFPeak Diode Re

 7.3. Size:169K  international rectifier
 irliz34g.pdf

IRLIZ34N IRLIZ34N

 7.4. Size:1637K  vishay
 irliz34g sihliz34g.pdf

IRLIZ34N IRLIZ34N

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 7.5. Size:1638K  vishay
 irliz34gpbf sihliz34g.pdf

IRLIZ34N IRLIZ34N

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 7.6. Size:275K  inchange semiconductor
 irliz34g.pdf

IRLIZ34N IRLIZ34N

iscN-Channel MOSFET Transistor IRLIZ34GFEATURESLow drain-source on-resistance:RDS(ON) 50m @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: IRLI640G , IRLIZ14A , IRLIZ14G , IRLIZ24A , IRLIZ24G , IRLIZ24N , IRLIZ34A , IRLIZ34G , 7N65 , IRLIZ44A , IRLIZ44G , IRLIZ44N , IRLL014 , IRLL014N , IRLL024N , IRLL110 , IRLL2703 .

 

 
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