FW297 Specs and Replacement

Type Designator: FW297

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOIC-8

FW297 substitution

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FW297 datasheet

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 fw297.pdf pdf_icon

FW297

FW297 Power MOSFET www.onsemi.com 60V, 58m , 4.5A, Dual N-Channel VDSS RDS(on) Max ID Max Features 58m @ 10V Low On-Resistance 60V 84m @ 4.5V 4.5A 4.0V Drive 95m @ 4.0V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications N-Channel 8 7 6 5 Absolute Maximum Ratings at Ta = 25 C Parameter... See More ⇒

Detailed specifications: FTK3341L, FTK3857L, FTK3857T, FTK50N06, FTK630, FTK830, FTK840, FW217A, IRFP250N, FW344A, FW389, FW4604, FX20ASJ-03F, FX20ASJ-06, FX20ASJ-2, FX20KMJ-03, FX20KMJ-06

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