FW297 Datasheet and Replacement
Type Designator: FW297
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOIC-8
- MOSFET Cross-Reference Search
FW297 Datasheet (PDF)
fw297.pdf

FW297 Power MOSFET www.onsemi.com 60V, 58m, 4.5A, Dual N-Channel VDSS RDS(on) Max ID MaxFeatures 58m@ 10V Low On-Resistance 60V 84m@ 4.5V 4.5A 4.0V Drive 95m@ 4.0V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications N-Channel 8 7 6 5Absolute Maximum Ratings at Ta = 25C Parameter
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
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History: MCH3484 | DMN30H4D0L



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