All MOSFET. FW297 Datasheet

 

FW297 Datasheet and Replacement


   Type Designator: FW297
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOIC-8
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FW297 Datasheet (PDF)

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FW297

FW297 Power MOSFET www.onsemi.com 60V, 58m, 4.5A, Dual N-Channel VDSS RDS(on) Max ID MaxFeatures 58m@ 10V Low On-Resistance 60V 84m@ 4.5V 4.5A 4.0V Drive 95m@ 4.0V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications N-Channel 8 7 6 5Absolute Maximum Ratings at Ta = 25C Parameter

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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