All MOSFET. FW297 Datasheet

 

FW297 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FW297
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOIC-8

 FW297 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FW297 Datasheet (PDF)

 ..1. Size:425K  onsemi
 fw297.pdf

FW297 FW297

FW297 Power MOSFET www.onsemi.com 60V, 58m, 4.5A, Dual N-Channel VDSS RDS(on) Max ID MaxFeatures 58m@ 10V Low On-Resistance 60V 84m@ 4.5V 4.5A 4.0V Drive 95m@ 4.0V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications N-Channel 8 7 6 5Absolute Maximum Ratings at Ta = 25C Parameter

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFH26N60Q

 

 
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