All MOSFET. FX50SMJ-06 Datasheet

 

FX50SMJ-06 Datasheet and Replacement


   Type Designator: FX50SMJ-06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 137 nS
   Cossⓘ - Output Capacitance: 1355 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0189 Ohm
   Package: TO-3P
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FX50SMJ-06 Datasheet (PDF)

 ..1. Size:194K  renesas
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FX50SMJ-06

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:222K  renesas
fx50smj-03.pdf pdf_icon

FX50SMJ-06

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:194K  renesas
fx50smj-2.pdf pdf_icon

FX50SMJ-06

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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History: FRF9250H | CED05N8 | MC08N005C | AON6794 | TPS1100Y | IRLR024 | BL10N70-A

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