FY10AAJ-03F Specs and Replacement
Type Designator: FY10AAJ-03F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP-8
FY10AAJ-03F substitution
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FY10AAJ-03F datasheet
fy10aaj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: FX6ASJ-06 , FX6ASJ-2 , FX6ASJ-3 , FX6KMJ-06 , FX6KMJ-2 , FX6KMJ-3 , FX70KMJ-03 , FX70SMJ-03 , IRFP250 , FY12AAJ-03F , FY14AAJ-03F , FY4ADJ-03A , FY4AEJ-03 , FY5ACJ-03F , FY6ACJ-03A , FY7BCH-02F , FY8AAJ-03F .
Keywords - FY10AAJ-03F MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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