All MOSFET. FY12AAJ-03F Datasheet

 

FY12AAJ-03F MOSFET. Datasheet pdf. Equivalent


   Type Designator: FY12AAJ-03F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SOP-8

 FY12AAJ-03F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FY12AAJ-03F Datasheet (PDF)

 ..1. Size:181K  renesas
 fy12aaj-03f.pdf

FY12AAJ-03F FY12AAJ-03F

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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