FY4AEJ-03 MOSFET. Datasheet pdf. Equivalent
Type Designator: FY4AEJ-03
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP-8
FY4AEJ-03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FY4AEJ-03 Datasheet (PDF)
..1. Size:242K renesas
fy4aej-03.pdf
fy4aej-03.pdf
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