All MOSFET. IRF840APBF Datasheet

 

IRF840APBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF840APBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220AB

 IRF840APBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF840APBF Datasheet (PDF)

Datasheet: FY7BCH-02F , FY8AAJ-03F , FY8ABJ-03 , IRF8252PBF , IRF8252PBF-1 , IRF8313PBF , IRF8327SPBF , IRF840ALPBF , MMIS60R580P , IRF840ASPBF , IRF840B , IRF840LC , IRF840LCLPBF , IRF840LCPBF , IRF840LCSPBF , IRF840LPBF , IRF840PBF .

 

 
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