SSM2306GN MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM2306GN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.7 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm
Package: SOT-23
SSM2306GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM2306GN Datasheet (PDF)
ssm2306gn.pdf
SSM2306NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate-drive BVDSS 20VLower on-resistance RDS(ON) 32mDSurface-mount package ID 5.3ASSOT-23GDescriptionPower MOSFETs from Silicon Standard utilize advanced processing techniques toachieve the lowest possible on-resistance in an extremely efficient andDcost-effective device.The SOT-23 package is widely use
ssm2309gn.pdf
SSM2309GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 75mDS(ON)Fast switching ID -3.7AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2309GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. It is well suitedSfor low voltage applications such as DC/DC c
ssm2307gn.pdf
SSM2307GNP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS -16VSimple Drive Requirement RDS(ON) 60mSmall Package Outline Surface Mount Device ID - 4ASSOT-23GDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec
ssm2304agn.pdf
SSM2304AGNN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 30VDSSDLower gate charge R 117mDS(ON)Fast switching characteristics ID 2.5ASSOT-23-3GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.GSThe SS
ssm2303gn.pdf
SSM2303NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VSmall package outline RDS(ON) 240mDSurface-mount device ID - 1.7ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness. GSAbsolute Maximum RatingsSymbol Parameter Rating Un
ssm2302gn.pdf
SSM2302NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSmall package outline RDS(ON) 85mDSurface-mount package ID 2.8ASSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiveness.GSAbsolute Maximum RatingsSymbol Parameter Rating Uni
ssm2305gn.pdf
SSM2305GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 65mDS(ON)Fast switching ID -4.2AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2305GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as
ssm2301gn.pdf
SSM2301NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -20VDSSSmall package outline RDS(ON) 130mDSurface-mount device ID -2.3ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching, lowGon-resistance and cost-effectiveness.SThe SOT-23 package is widely preferred for co
ssm2304gn.pdf
SSM2304NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 25VDSSSmall package outline R 117mDDS(ON)Surface-mount package I 2.5ADSSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness.DGSAbsolute Maximum RatingsSymbol Parameter Rati
ssm2305agn.pdf
SSM2305AGNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 80mDS(ON)Fast switching ID -3.2AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2305AGN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such a
ssm2307g.pdf
SSM2307Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION
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