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SSM2307GN Spec and Replacement


   Type Designator: SSM2307GN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23

 SSM2307GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM2307GN Specs

 ..1. Size:176K  silicon standard
ssm2307gn.pdf pdf_icon

SSM2307GN

SSM2307GN P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS -16V Simple Drive Requirement RDS(ON) 60m Small Package Outline Surface Mount Device ID - 4A S SOT-23 G DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec... See More ⇒

 6.1. Size:1477K  cn vbsemi
ssm2307g.pdf pdf_icon

SSM2307GN

SSM2307G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

 8.1. Size:149K  silicon standard
ssm2306gn.pdf pdf_icon

SSM2307GN

SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive BVDSS 20V Lower on-resistance RDS(ON) 32m D Surface-mount package ID 5.3A S SOT-23 G Description Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and D cost-effective device. The SOT-23 package is widely use... See More ⇒

 8.2. Size:307K  silicon standard
ssm2309gn.pdf pdf_icon

SSM2307GN

SSM2309GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 75m DS(ON) Fast switching ID -3.7A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited S for low voltage applications such as DC/DC c... See More ⇒

Detailed specifications: SSM2301GN , SSM2302GN , SSM2303GN , SSM2304AGN , SSM2304GN , SSM2305AGN , SSM2305GN , SSM2306GN , 5N60 , SSM2309GN , SSM2310GN , SSM2312GN , SSM2313GN , SSM2314GN , SSM2316GN , SSM2318GEN , SSM25T03GH .

History: BUZ171

Keywords - SSM2307GN MOSFET specs

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