SSM2312GN Datasheet. Specs and Replacement

Type Designator: SSM2312GN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOT-23-3

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SSM2312GN substitution

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SSM2312GN datasheet

 ..1. Size:310K  silicon standard
 ssm2312gn.pdf pdf_icon

SSM2312GN

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 50m DS(ON) Fast switching ID 4.3A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC... See More ⇒

 8.1. Size:313K  silicon standard
 ssm2313gn.pdf pdf_icon

SSM2312GN

SSM2313GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 120m DS(ON) Fast switching ID -2.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2313GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as... See More ⇒

 8.2. Size:498K  silicon standard
 ssm2316gn.pdf pdf_icon

SSM2312GN

SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2316GN acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 42m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 4.7A D The SSM2316GN is supplied in an RoHS-compliant Pb-free; RoHS-c... See More ⇒

 8.3. Size:499K  silicon standard
 ssm2310gn.pdf pdf_icon

SSM2312GN

SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2310GN acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 90m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 3A D The SSM2310GN is supplied in an RoHS-compliant Pb-free; RoHS-com... See More ⇒

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Detailed specifications: SSM2304AGN, SSM2304GN, SSM2305AGN, SSM2305GN, SSM2306GN, SSM2307GN, SSM2309GN, SSM2310GN, AO3407, SSM2313GN, SSM2314GN, SSM2316GN, SSM2318GEN, SSM25T03GH, SSM25T03GJ, SSM2602GY, SSM2602Y

Keywords - SSM2312GN MOSFET specs

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