All MOSFET. SSM2314GN Datasheet

 

SSM2314GN Datasheet and Replacement


   Type Designator: SSM2314GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT-23-3
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SSM2314GN Datasheet (PDF)

 ..1. Size:311K  silicon standard
 ssm2314gn.pdf pdf_icon

SSM2314GN

SSM2314GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 75mDS(ON)Fast switching ID 3.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2314GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 8.1. Size:310K  silicon standard
 ssm2312gn.pdf pdf_icon

SSM2314GN

SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 8.2. Size:313K  silicon standard
 ssm2313gn.pdf pdf_icon

SSM2314GN

SSM2313GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 120mDS(ON)Fast switching ID -2.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2313GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as

 8.3. Size:498K  silicon standard
 ssm2316gn.pdf pdf_icon

SSM2314GN

SSM2316GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2316GN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 42mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 4.7AD The SSM2316GN is supplied in an RoHS-compliantPb-free; RoHS-c

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History: VBNC1303 | IRFS4010PBF

Keywords - SSM2314GN MOSFET datasheet

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