SSM3J331R MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3J331R
Marking Code: KFO
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.4 nC
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
SSM3J331R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3J331R Datasheet (PDF)
ssm3j331r.pdf
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SSM3J331RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J331RSSM3J331RSSM3J331RSSM3J331R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 150 m (max) (@VGS = -1.5 V) RDS(ON) = 100 m (max) (@VGS = -1.8
ssm3j338r.pdf
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SSM3J338RMOSFETs Silicon P-Channel MOSSSM3J338RSSM3J338RSSM3J338RSSM3J338R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 26.3 m (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 m (typ.) (@VGS = -2.5 V) R
ssm3j334r.pdf
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SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R Power Management Switch Applications Unit: mm Low ON-resistance: R = 71 m (max) (@V = -10 V) DS(ON) GS R = 105 m (max) (@V = -4.5 V) DS(ON) GS R = 136 m (max) (@V = -4.0 V) DS(ON) GSAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source v
ssm3j332r.pdf
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SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R Power Management Switch Applications Unit: mm +0.080.42+0.08-0.050.17 1.8-V drive 0.05M A -0.073 Low ON-resistance: R = 144 m (max) (@V = -1.8 V) DS(ON) GS R = 72.0 m (max) (@V = -2.5 V) DS(ON) GS R = 50.0 m (max) (@V = -4.5 V) DS(ON) GS R = 42.0 m (m
ssm3j332r.pdf
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SSM3J332Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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