SSM3J331R Datasheet: MOSFET, P-Ch, 20V, 4A. Full specification with pinout and replacement list

SSM3J331R Datasheet. Specs and Replacement

Type Designator: SSM3J331R 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

📄📄 Copy

SSM3J331R substitution

- MOSFET ⓘ Cross-Reference Search

SSM3J331R datasheet

..1. Size:230K toshiba
ssm3j331r.pdf pdf_icon

SSM3J331R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J331R SSM3J331R SSM3J331R SSM3J331R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 150 m (max) (@VGS = -1.5 V) RDS(ON) = 100 m (max) (@VGS = -1.8... See More ⇒

7.1. Size:209K toshiba
ssm3j332r..pdf pdf_icon

... See More ⇒

7.2. Size:350K toshiba
ssm3j338r.pdf pdf_icon

SSM3J338R MOSFETs Silicon P-Channel MOS SSM3J338R SSM3J338R SSM3J338R SSM3J338R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 26.3 m (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 m (typ.) (@VGS = -2.5 V) R... See More ⇒

7.3. Size:468K toshiba
ssm3j334r.pdf pdf_icon

SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R Power Management Switch Applications Unit mm Low ON-resistance R = 71 m (max) (@V = -10 V) DS(ON) GS R = 105 m (max) (@V = -4.5 V) DS(ON) GS R = 136 m (max) (@V = -4.0 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source v... See More ⇒