IRLML2502 PDF and Equivalents Search

PD - 93757B IRLML2502 HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET G 1 SOT-23 Footprint VDSS = 20V Low Profile (... See More ⇒

IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (... See More ⇒

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2502 Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (... See More ⇒

Product specification IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (... See More ⇒

SMD Type MOSFET N-Channel MOSFET IRLML2502 (KRLML2502) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 4.2 A 1 2 RDS(ON) 45m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 RDS(ON) 80m (VGS = 2.5V) 1.9 -0.1 Fast Switching 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 ... See More ⇒

R UMW UMW IRLML2502 UMW IRLML2502 UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS N-Channel 20-V(D-S) MOSFET UMW IRLML2502 ID SOT-23 V(BR)DSS RDS(on)MAX 45m @4.5V 20V 4.2A 1. GATE 80 m @2.5V 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 1G MK Maximum ratin... See More ⇒

IRLML2502 N-Ch 20V Fast Switching MOSFETs Product Summary Description The IRLML2502 is the high cell density VDS 20 V trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the RDS(ON),typ 30 m small power switching and load switch ID 3.6 A applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliabili... See More ⇒

IRLML2502 N-Channel Enhancement-Mode MOSFET RoHS Device Halogen Free SOT-23 Features l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (... See More ⇒

PD - 96163A IRLML2502GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (... See More ⇒

IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (... See More ⇒

IRLML2502PbF-1 HEXFET Power MOSFET VDS 20 V RDS(on) max G 1 0.045 (@V = 4.5V) GS Qg (typical) 8.0 nC 3 D ID 4.2 A S 2 (@T = 25 C) A Micro3 (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL... See More ⇒

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IRLML2502TRPBF www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC... See More ⇒

IRLML2502G www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Con... See More ⇒

isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF FEATURES Low drain-source on-resistance RDS(on) 45m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provides the designer with an extremely efficient and reliable device for use in battery and load management. ABSOLUTE MAXIM... See More ⇒