SSM5G04TU Datasheet and Replacement. Cross Reference Search

SSM5G04TU Datasheet (PDF)

..1. Size:205K toshiba
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SSM5G04TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

8.1. Size:218K toshiba
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SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

8.2. Size:290K toshiba
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SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Unit: mm Combined a P-channel MOSFET and a Schottky barrier diode in one package. 1.60.05 Optimum for high-density mounting in small packages 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET 1 5Characteristics Symbol Rating Unit2Drain-So

8.3. Size:306K toshiba
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SSM5G09TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 8 VDC ID -1.5 Drain curre

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .