All MOSFET. IRF9530NSPBF Datasheet

 

IRF9530NSPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9530NSPBF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 58 nC

Rise Time (tr): 58 nS

Drain-Source Capacitance (Cd): 260 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO-263

IRF9530NSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9530NSPBF Datasheet (PDF)

1.1. irf9530nspbf.pdf Size:761K _upd-mosfet

IRF9530NSPBF IRF9530NSPBF

PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS

1.2. irf9530ns.pdf Size:173K _international_rectifier

IRF9530NSPBF IRF9530NSPBF

PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating Temperature RDS(on) = 0.20? Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex

 2.1. irf9530npbf.pdf Size:225K _upd-mosfet

IRF9530NSPBF IRF9530NSPBF

 IRF9530NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175°C Operating Temperature l Fast Switching DS(on) Ω l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description

2.2. irf9530n.pdf Size:113K _international_rectifier

IRF9530NSPBF IRF9530NSPBF

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast Switching RDS(on) = 0.20? P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

 2.3. irf9530n.pdf Size:241K _inchange_semiconductor

IRF9530NSPBF IRF9530NSPBF

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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