All MOSFET. IRF9Z14L Datasheet

 

IRF9Z14L Datasheet and Replacement


   Type Designator: IRF9Z14L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-262
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IRF9Z14L Datasheet (PDF)

 ..1. Size:1222K  international rectifier
 irf9z14spbf irf9z14lpbf.pdf pdf_icon

IRF9Z14L

PD-96014IRF9Z14SPbFIRF9Z14LPbF Lead-Free06/08/05Document Number: 91088 www.vishay.com1IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com2IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com3IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com4IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com5IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com6IR

 ..2. Size:361K  international rectifier
 irf9z14s irf9z14l.pdf pdf_icon

IRF9Z14L

PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

 ..3. Size:192K  vishay
 irf9z14l irf9z14lpbf.pdf pdf_icon

IRF9Z14L

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8

 ..4. Size:169K  vishay
 irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf pdf_icon

IRF9Z14L

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8

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Datasheet: IRF9630SPBF , IRF9640L , IRF9640LPBF , IRF9640PBF , IRF9640SPBF , IRF9910PBF-1 , IRF9952QPBF , IRF9Z10PBF , 13N50 , IRF9Z14LPBF , IRF9Z14PBF , IRF9Z14SPBF , IRF9Z20PBF , IRF9Z24L , IRF9Z24NLPBF , IRF9Z24NPBF , IRF9Z24NSPBF .

History: 2SJ473-01S | TPC8027

Keywords - IRF9Z14L MOSFET datasheet

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