IRFAG40 Datasheet and Replacement
Type Designator: IRFAG40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO3
IRFAG40 substitution
IRFAG40 Datasheet (PDF)
irfag40.pdf

PD -90575REPETITIVE AVALANCHE AND dv/dt RATED IRFAG401000V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAG40 1000V 3.5 3.9The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desi
irfag50.pdf

PD - 90582REPETITIVE AVALANCHE AND dv/dt RATED IRFAG501000V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAG50 1000V 2.0 5.6The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art des
irfag30.pdf

PD -90622REPETITIVE AVALANCHE AND dv/dt RATED IRFAG301000V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAG30 1000V 5.6 2.3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desi
Datasheet: IRFAC40 , IRFAC42 , IRFAE30 , IRFAE40 , IRFAE50 , IRFAF30 , IRFAF50 , IRFAG30 , 60N06 , IRFAG50 , SSM5G06FE , SSM5G09TU , SSM5G10TU , SSM5G11TU , SSM5H01TU , SSM5H05TU , SSM5H06FE .
History: NP180N04TUJ | SRT10N160LD
Keywords - IRFAG40 MOSFET datasheet
IRFAG40 cross reference
IRFAG40 equivalent finder
IRFAG40 lookup
IRFAG40 substitution
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History: NP180N04TUJ | SRT10N160LD



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