IRLMS5703 Datasheet and Replacement

PD - 94896IRLMS5703PbFHEXFET Power MOSFETl Generation V Technologyl Micro6 Package Style A1 6D Dl Ultra Low RDS(on)VDSS = -30V25l P-channel MOSFETDDl Lead-Free34G SRDS(on) = 0.18DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper

PD - 91413EIRLMS5703HEXFET Power MOSFET Generation V TechnologyA16 Micro6 Package Style D DVDSS = -30V Ultra Low Rds(on)25DD P-Channel MOSFET34G SRDS(on) = 0.20DescriptionT op V iewFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, co

PD - 95762IRLMS1503PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 30Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper

PD - 9.1540BIRLMS1902HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 20V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged

PD - 91414CIRLMS6702HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = -20Vl Ultra Low RDS(on)25DDl P-Channel MOSFET34G S RDS(on) = 0.20DescriptionFifth Generation HEXFET power MOSFETs from Top ViewInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper silicon area. T

PD- 94897IRLMS6802PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell Lead-Free3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

PD - 9.1508CIRLMS1503HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 30V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged

PD - 95359IRLMS1902PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per

PD- 93758DIRLMS2002HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l N-Channel MOSFET D DVDSS = 20Vl Surface Mount25Dl Available in Tape & Reel Dl 2.5V Rated3 4G SRDS(on) = 0.030Top ViewDescriptionThese N-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. Th

IRLMS1503PbF-1HEXFET Power MOSFETVDS 30 VA1 6D DRDS(on) max 0.10(@V = 10V)GS25DDRDS(on) max 0.20(@V = 4.5V)GS3 4G SQg (typical) 6.4 nCMicro6ID Top View3.2 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout Micro-6 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturing

IRLMS6702PbF-1HEXFET Power MOSFETVDS -20 VA1 6D DRDS(on) max 0.200(@V = -4.5V)GS25 DDRDS(on) max 0.375(@V = -2.7V)GS34G SQg (typical) 5.8 nCMicro6ID Top View-2.4 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout Micro-6 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufact

PD- 93759BIRLMS4502HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -12Vl Surface Mount25DDl Available in Tape & Reel34G SRDS(on) = 0.042Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefit

PD - 91540CIRLMS1902HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFET3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. T

PD- 91848EIRLMS6802HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reel3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitprov

PD- 95675IRLMS2002PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l N-Channel MOSFET D DVDSS = 20Vl Surface Mount25Dl Available in Tape & Reel Dl 2.5V Rated3 4l Lead-Free G SRDS(on) = 0.030Top ViewDescriptionThese N-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per si

PD - 95224IRLMS6702PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = -20Vl Ultra Low RDS(on)25DDl P-Channel MOSFETl Lead-Free34G S RDS(on) = 0.20DescriptionFifth Generation HEXFET power MOSFETs from Top ViewInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper

IRLMS6802TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm

IRLMS2002TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/